SQ2360EES features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? aec-q101 qualified c ?100 % r g and uis tested ? typical esd protection 800 v ? compliant to rohs directive 2002/95/ec notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material). c. parametric verification ongoing. product summary v ds (v) 60 r ds(on) ( ? ) at v gs = 10 v 0.085 r ds(on) ( ? ) at v gs = 4.5 v 0.130 i d (a) 4.4 configuration single n-channel mosfet s d g marking code: 8mxxx SQ2360EES g s d top view 2 3 to-236 (sot-23) 1 ordering information package sot-23 lead (pb)-free and halo gen-free SQ2360EES-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 4.4 a t c = 125 c 2.5 continuous source curr ent (diode conduction) i s 3.7 pulsed drain current a i dm 17 single pulse avalanche current l = 0.1 mh i as 6 single pulse avalanche energy e as 1.8 mj maximum power dissipation a t c = 25 c p d 3 w t c = 125 c 1 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 166 c/w junction-to-foot (drain) r thjf 50 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 5.5 a zero gate voltage drain current i dss v gs = 0 v v ds = 60 v - - 1 a v gs = 0 v v ds = 60 v, t j = 125 c - - 50 v gs = 0 v v ds = 60 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 10 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 6 a, t j = 25 c - 0.058 0.085 ? v gs = 10 v i d = 6 a, t j = 125 c - - 0.197 v gs = 10 v i d = 6 a, t j = 175 c - - 0.258 ? v gs = 4.5 v i d = 5 a - 0.081 0.130 forward transconductance b g fs v ds = - 15 v, i d = 1.9 a - 5.8 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 295 370 pf output capacitance c oss -5570 reverse transfer capacitance c rss -3555 total gate charge c q g v gs = 10 v v ds = 30 v, i d = 2 a -7.4012 nc gate-source charge c q gs -0.95- gate-drain charge c q gd -1.94- gate resistance r g f = 1 mhz 1.24 2.46 3.68 ? turn-on delay time c t d(on) v dd = 30 v, r l = 15 ? i d ? 2 a, v gen = 10 v, r g = 1 ? -58 ns rise time c t r -1117 turn-off delay time c t d(off) -1015 fall time c t f -812 source-drain diode ratings and characteristics b pulsed current a i sm --17a forward voltage v sd i f = 1.5 a, v gs = 0 - 0.8 1.2 v SQ2360EES product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. spefats t 25 , unless otherwise noted parameter sm test ts m. tp. ma. t static rainsource reakdown voltage v s v s , 25 a 6 v atesource threshold voltage v sth v s v s , 25 a .5 2.5 atesource eakage ss v s v, v s 2 v 5.5 a ero ate voltage rain urrent ss v s v v s 6 v a v s v v s 6 v, t 25 5 v s v v s 6 v, t 5 5 nstate rain urrent a on v s v v s t 5 v a rainsource nstate resistance a r son v s v 6 a, t 25 .5 .5 v s v 6 a, t 25 . v s v 6 a, t 5 .25 v s .5 v 5 a . .3 forward transconductance b g fs v s 5 v, . a 5. s ynamic b nput apacitance iss v s v v s 25 v, f m 25 3 pf utput apacitance oss 55 reverse transfer apacitance rss 3555 total ate harge c g v s v v s 3 v, 2 a .2 n atesource harge c gs .5 aterain harge c gd . ate resistance r g f m .2 2.6 3.6 turnn elay time c t don v 3 v, r 5 2 a, v e v, r g 5 ns rise time c t r turnff elay time c t doff 5 fall time c t f 2 sourcerain iode ratings and haracteristics b pulsed urrent a sm a forward voltage v s f .5 a, v s . .2 v
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